Formation of β-Be3N2 nanocrystallites in Be-implanted GaN

Formation and dissolution of microcrystalline graphite in carbon-implanted GaN

Blistering of H-implanted GaN

Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: ~i! ion energy ~from 20 to 150 keV!, ~ii! ion dose ~up to 1.2310 cm!, ~iii! implantation temperature ~from 2196 to 250 °C!, and ~iv! annealing temperature ~up to 900 °C!. Results show that both the onset of blistering ...

‏‎suppression of coke formation in thermal cracking by coke inhibitors‎‏

‏‎the main purpose of this research was to:1.develop a coking model for thermal cracking of naphtha.2.study coke inhibition methods using different coke inhibitors.developing a coking model in naphtha cracking reactors requires a suitable model of the thermal cracking reactor based on a reliable kinetic model.to obtain reliable results all these models shall be solved simultaneously.for this pu...

Formation and in situ dynamics of metallic nanoblisters in Ga implanted GaN nanowires

The formation of voids and bubbles in the energetic ion implantation process is an important issue in material science research, involving swelling induced embrittlement of materials in nuclear reactors, catalytic activities in the nanopores of the bubble, etc. We report here the formation and in situ dynamics of metallic nanoblisters in GaN nanowires under self-ion implantation using a Ga focu...

Cathodoluminescence depth profiling of ion-implanted GaN